1. Ultimate control of thermal budget
Optimize thermal budget, both in time and in depth, by combining UV surface-selective anneal and heat diffusion control with tunable irradiation duration (µs timescale).
Such technology opens a new annealing space between sub-melting standard techniques and melting laser anneal.
Reach record dopant activation levels in a diffusion-less and defect-free process for WBG and Silicon materials.
Achieve in-depth dopants activation up to several micrometers or only over a couple of nanometers for advanced ultra-shallow junctions.
Boost metals lines and vias properties such as advanced interconnects.
Form high quality silicides with a thermal budget compatible for a wide range of technologies (SiC MOSFET, CMOS,..).
Optimize dielectrics phases and properties for embedded memories integration or gate stack improvement.
3. Industry Oriented
QA-3000 is a flexible tool compatible with all wafers types and diameters.
Ensure process uniformity with a scan and repeat process.
Reduce footprint on clean room with this compact laser annealing equipment.