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PV Equipment
<Thin Film Processing> Measurement System (RE-8000)
<Thin Film Processing>Cleaning/Etching Processor
<Crystal Silicon> PSG Vapor Cleaning Machine
<Crystal Silicon> Texture Processing Equipment
<Crystal Silicon> Raw silicon cleaning Equipment
<Crystal Silicon / Thin Film Prcessing> Slit-type coater
Inert Gas Circulation Refining System
<Crystal Silicon>Batch-type diffusion furnace system for PV

Batch-type diffusion furnace system for PV

<Crystal silicon>
Batch-type diffusion furnace system for PV

A gas diffusion system that batch processes silicon wafers in stacked high-temperature chambers.
A loader/unloader is also available upon customer request.

Features

  • Installation of many tens of systems for high-volume manufacturing
  • Five-stage furnace configuration equipped with an automatic transfer mechanism
  • High throughput processing of approximately 950 wafers per hour
  • Compatibility with 125 to 156 mm square/pseudo square wafers
  • Support of process gases used in individual customer specifications

Specifications

 Productivity 950 wafer/HR
　  -200 wafers / 1 boat (excluding 12 dummy wafers)
　  -Cycle Time: 65 m / batch　　 　　*Loading + Process + Unloading
 Dimensions　 10,525 mm (Furnace 6,025 + Transfer 4,500) x 3,600 mm x 2,522 mm
 Quality Spec. Target process: Diffusion, Oxidation, Annealing
Process Gas: POCl3, O2, N2
Uniformity: within wafer 5%, wafer to wafer 5%, batch to batch 3% (Diffusion 55Ω/sq., 5 point measurement)
 Heater Spec. Control Zone: 5 Zone Control /stage (Total 5 stage)
Element Material: Kanthal Al
Length: 1,850 mm
Max Heating temperature: 1,150℃
Flat Zone length : 1,000 mm at 850 ± 1℃