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Laser Annealer LT-3000/3100

Laser Annealer LT-3000/3100

Screen introduces its laser thermal annealing technology addressing the constraints of advanced device thermal processing. The technology flexibility allows to meet a large spectrum of requirements for many different applications through the LT-3000 tool family which will enlarge with the new platform named LT-3100. The systems utilize a unique UV laser technology allowing a specific melt process bringing benefits in dopant activation, thin films crystallization, defect curing, surface smoothing, 3D stacking and a few more. The heating-cooling cycle is the fastest ever available below 200ns. The step and repeat approach makes the process uniform across the devices as well as across the wafers whatever the wafer size. At the same time, the benefits of the LT-3000 are accessible to customers using small wafers for advanced power devices as well as thin wafers down to 40μm. The LT product family is leveraging a flexible platform to be adapted to specific application needs and productivity. Among its unique capabilities, a real time monitoring of the process allows a detailed process tracking. The full device capability brings also a unique tool for process development by providing the possibility to do combinatorial experiments: then hundredths different processing conditions can be done at once on a single wafer. This allows cutting down the process development time and cost.

Features

  1. Ultra-Iow Thermal Budget
    Achieving the highest possible temperature gradient in sub-micro seconds, LT tools are able to anneal fragile substrates without damaging critical device structures.
  2. Full Device Exposure
    Annealing one die, a group of dies or only the desired region in a single shot, the LT makes it all possible by shaping the beam size to meet process and device requirements without stitching.
  3. Dopant Activation Control
    Obtaining unprecedented high line and parametric yield levels are only possible with the LT annealing process. By melt-annealing, the dopants are superactivated and the low resistance layer is defect free.

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